Indian researchers have developed a high performance industry-standard model for Aluminium gallium nitride (AlGaN\/GaN) High Electron Mobility Transistors (HEMTs).<\/span><\/p>\n HEMT or High Electron Mobility Transistor is a type of field effect transistor (FET) which is used to produce high performance at microwave frequencies.\u00a0<\/span><\/p>\n In March 2021, scientists from Bangalore has developed a first-ever indigenous HEMT device made from gallium nitride (GaN).<\/p>\n Researchers have now developed a high performance industry-standard model for HEMT device made from Aluminium gallium nitride (AlGaN\/GaN).<\/span><\/p>\n Properties:<\/strong> The device has two excellent properties \u2013 high mobility<\/strong> and high-power performance<\/strong>. These properties reduce the noise figure and complexity while designing Low Noise Amplifiers (LNAs) (used in wireless transmission like mobile phones, base stations)<\/em> while increasing the achievable bandwidth.<\/span><\/p>\n This device can also be<\/span> used to make high-power Radio Frequency (RF) circuits<\/strong>. (Radio Frequency circuits include amplifiers and switches, which are used in wireless transmission and are useful for space and defence applications)<\/em><\/span><\/p>\n It has also become technology of choice for high-frequency and high-power applications<\/strong> like 5G, radars, base stations, satellite communications.<\/span><\/p>\n Source:<\/b>This post is based on the article <\/span>\u2018<\/b>Scientists develop high-performance transistor models and circuits useful for space and defense applications<\/b>\u2019 <\/b>published in PIB <\/b>on 31st<\/sup> Dec 2021.<\/b><\/p>\n","protected":false},"excerpt":{"rendered":" What is the news? Indian researchers have developed a high performance industry-standard model for Aluminium gallium nitride (AlGaN\/GaN) High Electron Mobility Transistors (HEMTs). What is a High Electron Mobility Transistors (HEMTs)?\u00a0 HEMT or High Electron Mobility Transistor is a type of field effect transistor (FET) which is used to produce high performance at microwave frequencies.\u00a0… Continue reading Scientists develop high-performance transistor models and circuits useful for space and defense applications<\/span><\/a><\/p>\n","protected":false},"author":10317,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"jetpack_post_was_ever_published":false,"footnotes":""},"categories":[1566,9],"tags":[3590],"class_list":["post-157660","post","type-post","status-publish","format-standard","hentry","category-daily-factly-articles","category-public","tag-pib","entry"],"jetpack_featured_media_url":"","views":{"total":0,"cached_at":"","cached_date":1700009026},"jetpack_sharing_enabled":true,"_links":{"self":[{"href":"https:\/\/forumias.com\/blog\/wp-json\/wp\/v2\/posts\/157660","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/forumias.com\/blog\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/forumias.com\/blog\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/forumias.com\/blog\/wp-json\/wp\/v2\/users\/10317"}],"replies":[{"embeddable":true,"href":"https:\/\/forumias.com\/blog\/wp-json\/wp\/v2\/comments?post=157660"}],"version-history":[{"count":0,"href":"https:\/\/forumias.com\/blog\/wp-json\/wp\/v2\/posts\/157660\/revisions"}],"wp:attachment":[{"href":"https:\/\/forumias.com\/blog\/wp-json\/wp\/v2\/media?parent=157660"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/forumias.com\/blog\/wp-json\/wp\/v2\/categories?post=157660"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/forumias.com\/blog\/wp-json\/wp\/v2\/tags?post=157660"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}What is a High Electron Mobility Transistors (HEMTs)?\u00a0<\/strong><\/h5>\n
What has the researchers developed now?<\/strong><\/h5>\n