DST-INSPIRE Faculty fellow working on doping techniques for monolayer and bi-layer 2D-semiconductors for future 2D-electronics devices optimization

What is the News?

A recipient of the INSPIRE Faculty fellowship is working on two-dimensional (2D) semiconductors.

What is the researcher working on?

Due to the continual shrinking of the dimension of transistors, silicon (Si) technology has reached its limit. Therefore, new materials systems and device designs have been explored to carry on Moore’s law. 

Researchers are working on the exceptional and tunable nature of two-dimensional(2D) semiconductors. They look very promising due to their stability and high device performance.

Hence, this has opened new possibilities for nanoelectronics, optoelectronics, and sensor applications.

What is an INSPIRE Faculty fellowship?

Nodal Ministry: Department of Science and Technology.

Purpose: The scheme offers postdoctoral fellowships to young achievers with an opportunity for independent research. 

Eligibility: The candidate should be an Indian citizen or a person of Indian origin with PIO status having a PhD degree (in science, mathematics, engineering, pharmacy, medicine and agriculture-related subjects) from any recognised university. 

– Candidates should possess a minimum of 60% (or equivalent CGPA) marks throughout their academic profile starting from the higher secondary examination (class 12 onwards).

– Those who have submitted their PhD theses and are awaiting the award of the degree shall also be eligible. However, selection for the fellowship will be confirmed only after the PhD degree is awarded. 

Age Limit: The upper age limit at the time of awarding the offer should be 32 years for considering support.

Prize: Each selected INSPIRE faculty fellow will be eligible to receive a consolidated amount of Rs 1,25,000 per month as a fellowship. 

In addition, a research grant of Rs 7 lakh every year for 5 years will also be provided to each successful candidate including the carryforward amount, if any, from the previous year.

Source: This post is based on the article “DST-INSPIRE Faculty fellow working on doping techniques for monolayer and bi-layer 2D-semiconductors for future 2D-electronics devices optimization” published in PIB on 15th Mar 2022.