Indigenous Development of Silicon Carbide and GaN HEMT Technology

Source: This post on Indigenous Development of Silicon Carbide and GaN HEMT Technology has been created based on the article “Indigenous Development of Silicon Carbide Wafers and GaN HEMT based MMIC Technology up to X-band Applications” published in PIB on 12th November 2024.

Why in news?

The Solid State Physics Laboratory, a DRDO laboratory, has successfully developed indigenous processes for growing and manufacturing 4-inch diameter Silicon Carbide (SiC) wafers, which are essential for high-performance and durable semiconductor applications.

About Gallium Nitride (GaN) and Silicon Carbide (SiC)

1. Gallium Nitride (GaN) and Silicon Carbide (SiC) are two wide-bandgap semiconductor materials that have revolutionized the power electronics industry due to their high-efficiency capabilities in power conversion, high-temperature operation, and fast-switching applications.

2. Significance of GaN/SiC Technology:

i) Key Enabler for Future Applications: The GaN/SiC technology is crucial for advancements across defense, aerospace, and clean energy.

ii) Enhanced System Efficiency and Portability: It enables improvements in efficiency, reduced weight, and compact size, making it ideal for modern combat systems, RADARS, and electronic warfare applications.

3. Applications Across Sectors

i) Military and Commercial Use: It supports intelligence, reconnaissance, communications, and unmanned systems for military and commercial sectors.

ii) Impact on Renewable Energy and EVs: It is lighter amd more efficient power supplies benefit electric vehicles and green energy solutions.

4. Production: Indigenous GaN/SiC-based MMIC production has begun and this will enable applications in advanced strategic systems, space, aerospace, 5G, and satellite communications.

5. Strategic Importance: This achievement boosts India’s self-reliance in semiconductor technology, marking a milestone toward a more self-sufficient tech ecosystem.

It has also fabricated Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) with power handling capability up to 150W and Monolithic Microwave Integrated Circuits (MMICs) with power capability up to 40W for applications up to X-band frequencies, thus enhancing performance across defense and commercial sectors.

UPSC Syllabus: Science and technology