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What is the news?
Indian researchers have developed a high performance industry-standard model for Aluminium gallium nitride (AlGaN/GaN) High Electron Mobility Transistors (HEMTs).
What is a High Electron Mobility Transistors (HEMTs)?
HEMT or High Electron Mobility Transistor is a type of field effect transistor (FET) which is used to produce high performance at microwave frequencies.
In March 2021, scientists from Bangalore has developed a first-ever indigenous HEMT device made from gallium nitride (GaN).
What has the researchers developed now?
Researchers have now developed a high performance industry-standard model for HEMT device made from Aluminium gallium nitride (AlGaN/GaN).
Properties: The device has two excellent properties – high mobility and high-power performance. These properties reduce the noise figure and complexity while designing Low Noise Amplifiers (LNAs) (used in wireless transmission like mobile phones, base stations) while increasing the achievable bandwidth.
This device can also be used to make high-power Radio Frequency (RF) circuits. (Radio Frequency circuits include amplifiers and switches, which are used in wireless transmission and are useful for space and defence applications)
It has also become technology of choice for high-frequency and high-power applications like 5G, radars, base stations, satellite communications.
Source:This post is based on the article ‘Scientists develop high-performance transistor models and circuits useful for space and defense applications’ published in PIB on 31st Dec 2021.
