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Source: The post is based on the article “New Artificial Nanostructures for Infrared Absorption Technologies can be useful in Defense, Imaging & Sensing” published in the PIB on 24th December 2022.
What is the News?
A new method to confine and absorb infrared (IR) light with (Gallium nitride)GaN nanostructures can help develop highly efficient infrared absorbers, emitters, and modulators.
About Gallium nitride(GaN)
The GaN is one of the most advanced semiconductors. It is widely used as a material for blue light emission. In the last 25 years, blue LED with GaN has changed the world significantly.
Apart from that, GaN is also used in visible and ultraviolet light applications. As LEDs and laser diodes are commercially available, the utilization of GaN for IR light harvesting or development of GaN-based IR optical elements is lacking.
About the recent research
The researchers have shown for the first time infrared light emission and absorption with GaN nanostructures. Though blue light emission from GaN has been known for some time, this is the first time that infrared light-matter interactions are demonstrated in GaN.
For this demonstration, the scientists have utilized a scientific phenomenon called surface polariton excitations in GaN nanostructures that lead to light-matter interactions at IR spectral range.
Note: Surface polaritons are special modes of electromagnetic waves travelling at the interface of a conductor and an insulator such as air.
By altering the morphology and shape of the nanostructures, scientists are also able to excite plasmon polaritons in GaN
What are the benefits of recent research?
a) The same research can be translated to many other semiconductors as well, b) The findings will address the demand for IR sources and detectors for energy, security, imaging, and other applications such as Defense, Imaging & Sensing.
